Atmospheric chemical vapor deposition of graphene on molybdenum foil at different growth temperatures
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서지정보
ㆍ발행기관 : 한국탄소학회
ㆍ수록지정보 : Carbon Letters / 18권 / 1호
ㆍ저자명 : Samira Naghdi, Kyong Yop Rhee, Man Tae Kim, Babak Jaleh, Soo Jin Park
ㆍ저자명 : Samira Naghdi, Kyong Yop Rhee, Man Tae Kim, Babak Jaleh, Soo Jin Park
목차
1. Introduction2. Experimental
3. Results and Discussion
4. Conclusions
References
한국어 초록
Graphene was grown on molybdenum (Mo) foil by a chemical vapor deposition method atdifferent growth temperatures (1000°C, 1100°C, and 1200°C). The properties of graphenewere investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy, and Ramanspectroscopy. The results showed that the quality of the deposited graphene layer wasaffected by the growth temperature. XRD results showed the presence of a carbide phase onthe Mo surface; the presence of carbide was more intense at 1200°C. Additionally, a higherI2D/IG ratio (0.418) was observed at 1200°C, which implies that there are fewer graphene layersat this temperature. The lowest ID/IG ratio (0.908) for the graphene layers was obtainedat 1200°C, suggesting that graphene had fewer defects at this temperature. The size of thegraphene domains was also calculated. We found that by increasing the growth temperature,the graphene domain size also increased.영어 초록
Graphene was grown on molybdenum (Mo) foil by a chemical vapor deposition method atdifferent growth temperatures (1000°C, 1100°C, and 1200°C). The properties of graphene
were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy, and Raman
spectroscopy. The results showed that the quality of the deposited graphene layer was
affected by the growth temperature. XRD results showed the presence of a carbide phase on
the Mo surface; the presence of carbide was more intense at 1200°C. Additionally, a higher
I2D/IG ratio (0.418) was observed at 1200°C, which implies that there are fewer graphene layers
at this temperature. The lowest ID/IG ratio (0.908) for the graphene layers was obtained
at 1200°C, suggesting that graphene had fewer defects at this temperature. The size of the
graphene domains was also calculated. We found that by increasing the growth temperature,
the graphene domain size also increased.
참고 자료
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