열 원자층 식각법을 이용한 박막 재료 식각 연구

서지정보

ㆍ발행기관 : 한국분말야금학회 ㆍ수록지정보 : 한국분말야금학회지 / 30권 / 1호
ㆍ저자명 : 조현희, 이서현, 윤은서, 서지은, 이진우, 한동훈, 남서아, 한정환

목차

Abstract
1. 서 론
2. ALE의 원리 및 반응 메커니즘
2.1. ALE의 원리
2.2. ALE 반응의 메커니즘
3. 산화물, 금속, 질화물의 열 원자층 식각 공정
3.1. 산화물 thermal ALE
3.2. 금속의 thermal ALE
3.3. 질화물의 thermal ALE
4. 결 론
감사의 글
References

영어 초록

Atomic layer etching (ALE) is a promising technique with atomic-level thickness controllability and high selectivity based on self-limiting surface reactions. ALE is performed by sequential exposure of the film surface to reactants, which results in surface modification and release of volatile species. Among the various ALE methods, thermal ALE involves a thermally activated reaction by employing gas species to release the modified surface without using energetic species, such as accelerated ions and neutral beams. In this study, the basic principle and surface reaction mechanisms of thermal ALE?processes, including “fluorination-ligand exchange reaction”, “conversion-etch reaction”, “conversion-fluorination reaction”, “oxidation-fluorination reaction”, “oxidation-ligand exchange reaction”, and “oxidation-conversion-fluorination reaction” are described. In addition, the reported thermal ALE processes for the removal of various oxides, metals, and nitrides are presented.

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