박막 재료

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Introduction to film patterning
Patterning and fabricating a metallzation level
Plasma etching mechanisms
Plasma etching parameters
Plasma etching reactors
Temperature rise of films during plasma processing
Hybrid and modified PVD processes
Ion plating
Coating uniformity
Reactive evaporation processes
ARC plasma deposition
Ion-Beam-Assisted deposition
Ionized cluster beam (ICB) deposition
Plasma-Immersion ion implantation
conclusion

본문내용

*Until now the only film dimension considered has been thickness, a variable
controlled by the growth or deposition process.
However, the fabrication of thin-film devices for all sorts of applications, no
t only microelectronics, generally requires that they be geometrically define
d laterally or patterned in the film plane.

*Such demanding applications require lithographic techniques and the use o
f chemically reactive plasma etching, providing the rationale for inclusion o
f this subject matter here.

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