DRAM Technology

소개글

DRAM 기능적인 특징을 구현하는데 있어서 어떤 기술적인 기능으로 기억보조장치로써 구현되는지를 구체적으로 다루어진 이론이며 공정기술에서 공정 대한 기술적인 이론이이다. 반도체업계나 DRAM 보조기억장치에 대해서 알고자 하시는 분들에게 추천합니다.

목차

1. Introduction
1.1. Overview of Si-technology
1.2. Brief review on Si-memories.
2. Fundamentals of DRAM
2.1. Data storage in DRAM cell
2.2. Sensing signal margin
2.3. Considerations for DRAM
2.4. Key process technologies for DRAM
3. Challenges in DRAM
4. Recent Studies for Future DRAM

본문내용

1.1 Overview of Si-technology

- Trend of Information storage capacity
- Trend of Information processing capacity
- Trend of advances of semiconductor technology
- Trend of Fab.cost
- Trend of complexity of DRAM process

(중간 그림설명 생략)


- For the last 20 years, Si-technology has achieved great
success by “Shrink Technology” for higher density and higher
performance

* > x 1000 storage capacity
* > x 1000 performance
* > x 1/10 device size

- However, Si-technology based on “Shrink Technology” exposes many issues.

* Cost issues(Fab, Equipment, Process Complexity, Variation)
* Power issues
* Yield

참고 자료

- Memory System l David Wang, Bruce Jacob, Spencer 저 ㅣ Morgan Kanfmann l 2007년 개정판.