ga1-xalxas gaalas superlattices.
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- 2010.11.22
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소개글
ga1-xalxas gaalas superlattices.
목차
Ga1-xAlxAs
Superlattice
Laser Diode - Double heterostructure lasers
Quantum Well Infrared Photodetector
Purpose
Experimental
Cross-sectional TEM
Electron Diffraction Pattern
AFM images
XPS quantitative analysis
Reference
본문내용
Ga1-xAlxAs
Semiconductor material with nearly the same lattice constant as GaAs, but a larger band-gap.
The x in the formula is a number between 0 and 1 - arbitrary alloy between GaAs and AlAs.
Used as a barrier material in GaAs based heterostructure devices.
Superlattice.
Alternating layers of two semiconductors with different band gaps and thickness of these layers lies between 1 - 10 nm
참고 자료
Semiconductor – R. Mazurczyk
Commercialization of quantum well infrared photodetector Focal plane arrays – C. A. Kukkonen
Achievement of alternative amorphous AlAs/crystalline AlGaAs multilayers – Hao Wang
Effect of growth-interrupted method on quality of AlGaAs/GaAs multiple quantum wells prepared by MBE – Guo Feng-yun
Quantitative analysis of AlxGa1-xAs/GaAs multiquantum wells by means of AES depth profiling and small area XPS – J. Olivier
http://en.wikipedia.org/wiki/Aluminium_gallium_arsenide
http://en.wikipedia.org/wiki/Laser_diode