반도체 공학 프로젝트
- 최초 등록일
- 2013.03.15
- 최종 저작일
- 2012.06
- 30페이지/ MS 파워포인트
- 가격 2,000원
목차
1. PMOS Specification
2. Form N-well regions
3. Patterning N-well Mask
4. Etching Oxide
5. N-type Diffusion
6. Form Active Region
7. Etching SiN
8. Field Oxide
9. Removing SiN
10. Form Gate(Poly layer)
11. Form PMOS Source & Drain
12. P-type Implantation
13. N-type Implantation
14. Form Contacts
15. Form Metal Traces
16. Form Vias to Metal
17. Form Additional Traces
본문내용
Screen Oxide(300Å)를 통해서 인을 주입하는 과정 900 ℃ 50min
N-well
E=150keV, Dose : 1.0 x 1016 atom/Cm-2
Predeposition : 900℃ 20min
Drive ? in : 900℃ 30min
N-type Diffusion
Deposit SiN over wafer
Deposit photoresist over SiN layer
SiN : 1200Å LPCVD 공정이용
Form Active Region
Etch SiN in exposed areas
- leaves SiN mask which blocks
oxide growth
<중 략>
Remove SiN
Removing SiN
Grow thin Gate Oxide
- over entire wafer
- negligible effect on FOX regions
Dry Oxidation 900℃, 55min
Thickness : 200Å
Form Gate(Poly layer) 1
Pattern Photoresist
*POLY MASK
Etch Poly in exposed areas
Etch/remove Oxide
- gate protected by poly
LPCVD로 Poly silicon 증착 후 Photolithography 진행
Poly silicon Thickness : 3000Å
<중 략>
Deposit oxide
Deposit photoresist
LTO(Low Temperature Oxide)
8000Å, 100min
LPCVD와 비슷한 과정
Form Contacts
Pattern photoresist
- *CONTACT Mask
- One mask for both active and poly
contact shown
Form Contacts 2
Etch oxide
Form Contacts
참고 자료
없음