서강대학교 물리전자공학 설계 Design of NMOSFETs
- 최초 등록일
- 2013.04.12
- 최종 저작일
- 2012.06
- 4페이지/
한컴오피스
- 가격 2,500원
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소개글
논문형식으로 작성하였습니다.
nanocad simulator를 이용한 long channel NMOSFET설계입니다.
공부에 많은 도움되길 바랍니다.
목차
1. Title
2. Design Objective
3. Results and Discussion
4. Conclusion
5. References
본문내용
1. Title
Design and analysis of long-channel nMOSFETs
2. Design Objective
Long-channel nMOSFETs will be designed and analyzed.
3. Results and Discussion
Part A. Design a 0.5-um-long nMOSFET such that you can get good performance for 3-V operation.
△ Structure of nMOSFET
In a MOSFET, the current through the drain and source, is equal to . From this equation, as gate length L becomes smaller the `short-channel effect` affects MOSFET and leads to decrease of ( roll-off) and DIBL effect. But in this design, we can ignore those effects because 0.5um gate length is sufficiently long. The factors that determine the performance are the S factor and the parameter. The standby power that a MOSFET consumes is . As MOSFET is not working when its off, it is essential to make as small as possible.
참고 자료
Streetman, Solid State Electronic Device 6/e, Pearson Education. pp. 282~313, 2006
Sedra/Smith, Microelectronic Circuits 6/e, Oxford Univ. Press. pp. 355~379, 2011