반도체 LED 강의 3장 : CVD와 Epi기술
- 최초 등록일
- 2014.05.20
- 최종 저작일
- 2014.01
- 31페이지/
어도비 PDF
- 가격 5,000원
소개글
1장. 반도체 기술
2장. LED 에 대해
3장. LED의 CVD및 Epi기술
4장. LED의 Fab기술
5장. LED의 Package기술
6장. LED Device 와 특성
7장. 특수 LED 응용 및 market trend
목차
1. Epi공정Epitaxial Growth과정(일종의CVD기술)
2. Family of CVD Technologies
3. CVD란?
4. Chemical Vapor Deposition
5. CVD Reactors
6. CVD Growth Model
7. Plasma Enhanced (PE)CVD
8. PVD 중의하나인Evaporation 장치
9. PVD Film 특성
10. Silicon CVD ‘Epitaxy’
11. Silicon EpitaxyProcess
12. Si 반도체에서사용되는CVD 공정들
13. MO-CVD
14. 그럼, LED의CVD 즉MOCVD
15. LED chip 생산에MOCVD를주로사용하는이유
16. MOCVD Facility, horizontal reactor
17. Vapor pressure of most common MO compounds
18. Horizontal reactors
19. Planetary reactors (MOCVD)
20. Vertical reactors
21. MOCVD의막박막성장(Thin Film Growth]
22. GaN성장시MOCVD의Basic Reaction
23. MOCVD 공정: GaNNucleation Layer의성장
24. GaNthin film의Growth Process
25. Epi Defects
26. LED 에미치는dislocation의영향
27. GaN growth on PSS
28. LED on PSS
본문내용
? Chemical vapor deposition (CVD) is a chemical process used to produce high-purity, high-performance solid materials. ? The process is often used in the semiconductor industry to produce thin films. ? In a typical CVD process, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. ? Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.
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