연세대학교 전자회로(2) 프로젝트

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The upper figure is what we made for this project. The total current is 498.09uA and the total power is 2.49mW. In this circuit, left three MOSFET are located to adjust a bias point. By changing width and length of left three MOSFET, we get the proper the bias value. The right four MOSFET function as a amplifier to higher gain in given bias. We used level 7 MOSFET. It is not ideal one, so there was little current that flow body to ground or .
Before the start to make a circuit, we adjust the value of voltages to set the MOSFET to saturation region that is the rule as .
Theoretically, we can calculate bias and gain and pole of this circuit. First, let's calculate bias. Let’s assume it is ideal MOSFET and all MOSFETs are in saturation region. The voltage that we should get is three(,,). We should find the value that make current 100uA. let’s assume

참고 자료

Sedra/Smith, Microelectonic Circuits 5e, Oxford University Press, 2004
B. Razavi, Fundamentals of Microelectronics, Wiley, 2006
B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill, 2000
Phillip E. Allen, 윤광섭 역, CMOS 아날로그 회로설계, 홍릉과학출판사, 2006
한건희, 전자회로, 홍릉과학출판사, 2009