Flash memory
- 최초 등록일
- 2017.05.12
- 최종 저작일
- 2017.01
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목차
1. Semiconductor memory
2. NVM operation principle
3. Flash memory array
4. SONOS flash memory
5. Issues of CTF memory
6. Next generation NVM
7. NAND Flash Process Tech
본문내용
Program mechanism : CHE injection
- Hot-electron injection from channel to floating gate
- Channel hot electron (CHE) injection
- Drain Current : 300~400uA / Cell
- Gate CHE Injection Current : ~100pA / Cell
- Lucky electron model
<중 략>
Evolution of SONOS
In 1960s and 70s
- MNOS device was p-channel device
-Aluminum gate, relative thick nitride (45nm), and thin tunnel oxide (2nm)
- Program voltage was typically around (25-30V)
참고 자료
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