열전달 솔루션

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PROBLEM 1.41
KNOWN: Hot plate-type wafer thermal processing tool based upon heat transfer modes by conduction through gas within the gap and by radiation exchange across gap.
FIND: (a) Radiative and conduction heat fluxes across gap for specified hot plate and wafer temperatures and gap separation; initial time rate of change in wafer temperature for each mode, and (b) heat fluxes and initial temperature-time change for gap separations of 0.2, 0.5 and 1.0 mm for hot plate temperatures 300 < Th < 1300°C. Comment on the relative importance of the modes and the influence of the gap distance. Under what conditions could a wafer be heated to 900°C in less than 10 seconds?

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