[물리전자] Solid State Electronic Devices by Ben Streetman (7단원 정리) 목차 참고

목차

1. In regard to the Figure 7-1, explain how the reverse saturation current can be controlled? In other words, show how the reverse current can be increased.
2. For the Figure 7-2, explain how the IC can be controlled? In other words, which voltage can increase or decrease the IC?
3. For the Figure 7-2, list the three requirements of good p-n-p transistor in terms of Wb, LP, IE, IB and IC.
4. In regard to the Figure 7-3, what are the major sources of base current IB?
5. In regard to the Figure 7-3, how can we minimize the base current IB? List at least two ways.
6. In regard to the Figure 7-3, explain what the base transport factor B is.
7. In regard to the Figure 7-3, explain what the emitter injection efficiency γ is.
8. In regard to the Figure 7-3, explain what the current transfer ratio α is.
9. In regard to the Figure 7-4, if τp = 20 μs and τt = 0.1 μs, what is the β for the BJT?
10. In regard to the Figure 7-4, if IB is 0.2 mA what is IC?
11. In regard to the Figure 7-12, what are the bias directions for on and off states?

본문내용

The reverse saturation current through this diode depends on the rate at which minority carriers are generated in neighborhood of the junction.

At the right part is reverse bias at Base to Collector. So there is no current flow Ic=0. But Ic can be controlled by VE which is forward bias part voltage. The left part current push p+ to n, so current made which is n to p

참고 자료

Solid State Electronic Devices by Ben Streetman (7ed)