기초전자회로 및 실험 - MOSFET 특성

소개글

"기초전자회로 및 실험 - MOSFET 특성"에 대한 내용입니다.

목차

1. Purpose of Experiment
2. Method of Experiment
3. Results of Experiment
4. Contemplation of Experiment
5. Conclusion about Experiment

본문내용

1. Purpose of Experiment

In this experiment, we will understand electronic characteristic of MOSFET such as I-V curves by utilizing NMOS and PMOS.

2. Method of Experiment

1) Measure V_GS-I_DS curve of NMOS and PMOS for 2 different values of V_DS so as to cover both cut-off and saturation region.
2) Measure V_DS-I_DS curve of NMOS and PMOS for 4 different values of V_GS so as to cover both cut-off and saturation region.
3) Measure V_GS-I_DS curve of NMOS for fixed value of V_DS and 3 different values of V_B. (Can be excluded and actually excluded)

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