SnO/Sn 혼합 타겟을 이용한 SnO 박막 제조 및 특성

서지정보

ㆍ발행기관 : 한국재료학회 ㆍ수록지정보 : 한국재료학회지 / 26권 / 4호
ㆍ저자명 : 김철, 김성동, 김은경

목차

1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
Acknowledgement
References

영어 초록

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of PO2 = 3 % was obtained with > 80 % transmittance, carrier concentration of 1.12 × 1018 cm−3, and mobility of 1.18 cm2V− 1s−1. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

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