박막의 표면 에칭방법-건식에칭과 습식에칭

소개글

이 PPT는 박막의 표면 에칭방법에 대해서 만든 자료로써, 건식 에칭, 습식에칭에 대해서 주로 설명하였으며, 리소그라피 공정도 함께 포함되어 있습니다.

목차

1.에칭이란
2.에칭공정
3.에칭타입
4.리소그라피
5.건식에칭
6.습식에칭
7.loading effect
8.etching gas

본문내용

♦ Etching of thin films and sometimes the silicon substrate are very common
process steps.
♦ Usually selectivity, and directionality are the first order issues.
♦ Selectivity comes from chemistry; directionality usually comes from physical
processes. Modern etching techniques try to optimize both.
♦ Simulation tools are beginning to play an important role in etching just as
they are in deposition. Topography simulators often do both, based on the
same physical principles.



Loading Effects
Macroscopic loading Effect
Microscopic loading Effect
Aspect ratio dependent etching
Decline of etching rate overall through the
increase of wafer number of etching area
Etching rate difference between congested area
and not congested area in the same substrate
- not congested area is high etching rate
Decrease of etch rate increasing the aspect
Ratio
(the depth of etching/the Width of etching)
Etching Gas
Use of Freon gas or Fluoro-carbon gas

참고 자료

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